Characterization of electrical parameters of a PtSi/p-Si Schottky barrier detector
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چکیده
منابع مشابه
Schottky barrier diode parameters of Ag/MgPc/p-Si structure
An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V plots indicated that the thermoionic emi...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2009
ISSN: 1349-2543
DOI: 10.1587/elex.6.1325